Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/044209
Kind Code:
A1
Abstract:
[Problem] To provide a semiconductor device which is capable of withstanding a higher voltage with more efficient area occupation.
[Solution] A semiconductor device which is provided with: a first conductivity type layer into which an impurity of a first conductivity type is introduced; a second conductivity type layer into which an impurity of a second conductivity type is introduced, said impurity of a second conductivity type having a polarity that is different from the polarity of the impurity of a first conductivity type; and an intermediate layer which is sandwiched between the first conductivity type layer and the second conductivity type layer, and which does not contain the impurity of a first conductivity type or the impurity of a second conductivity type, or alternatively has a concentration of the impurity of a first conductivity type or the impurity of a second conductivity type lower than the concentration of the impurity of the first conductivity type layer or the second conductivity type layer. This semiconductor device is configured such that the first conductivity type layer, the intermediate layer and the second conductivity type layer are laminated within a semiconductor substrate in the thickness direction of the semiconductor substrate.
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Inventors:
OKANO HITOSHI (JP)
Application Number:
PCT/JP2018/026529
Publication Date:
March 07, 2019
Filing Date:
July 13, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/02; H01L21/329; H01L21/822; H01L27/04; H01L27/06; H01L27/146; H01L29/861; H01L29/868; H01L29/87
Foreign References:
| JP2006227445A | 2006-08-31 | |||
| JP2011009466A | 2011-01-13 | |||
| JP2007141937A | 2007-06-07 | |||
| JP2011035095A | 2011-02-17 |
Attorney, Agent or Firm:
KAMEYA, Yoshiaki et al. (JP)
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