Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/045345
Kind Code:
A1
Abstract:
The present application provides a semiconductor device and an electronic device. A through hole is formed on a first active layer by arranging an insulating layer. A thin film transistor layer further comprises a third active layer which is at least partially located on the side wall of the through hole. One side of the third active layer is connected to the first active layer, and the other side of the third active layer is connected to a second active layer, thereby reducing the channel length, lowering the short channel effect, increasing the on-state current, and reducing the power consumption.
Inventors:
LI ZHIFU (CN)
LIU GUANGHUI (CN)
DAI CHAO (CN)
AI FEI (CN)
SONG DEWEI (CN)
LUO CHENGZHI (CN)
LIU GUANGHUI (CN)
DAI CHAO (CN)
AI FEI (CN)
SONG DEWEI (CN)
LUO CHENGZHI (CN)
Application Number:
PCT/CN2022/131460
Publication Date:
March 07, 2024
Filing Date:
November 11, 2022
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/786; H01L27/12
Foreign References:
| US20160233343A1 | 2016-08-11 | |||
| JP2012174836A | 2012-09-10 | |||
| CN114267740A | 2022-04-01 | |||
| US5937283A | 1999-08-10 | |||
| US20160093611A1 | 2016-03-31 |
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
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