Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/2022/190984
Kind Code:
A1
Abstract:
In the present invention, a first element included in a semiconductor layer 11 differs from a second element included in a semiconductor layer 21, and a third element included in a source electrode 13 is the same as a fourth element included in a gate electrode 22.

More Like This:
JP5669251Manufacturing method of semiconductor devices
JP7076601Display device
JP6395845Complementary circuits incorporating junction field effect transistors and junction field effect transistors
Inventors:
KOBAYASHI HIROAKI (JP)
Application Number:
PCT/JP2022/008828
Publication Date:
September 15, 2022
Filing Date:
March 02, 2022
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
CANON KK (JP)
International Classes:
H01L29/786; G09F9/30; H01L21/336; H01L21/8234; H01L21/8238; H01L27/088; H01L27/092; H01L51/50; H05B33/14
Foreign References:
JP2018025777A2018-02-15
JP2018006733A2018-01-11
JP2015156486A2015-08-27
JP2014075699A2014-04-24
JP2018018068A2018-02-01
CN112289744A2021-01-29
Attorney, Agent or Firm:
ABE Takuma et al. (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: RECORDING DEVICE, CONTROL METHOD, AND PROGRAM

Next Patent: SODIUM TITANIUM PHOSPHATE AND USE THEREFOR