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Title:
SEMICONDUCTOR DEVICE, FABRICATION METHOD THEREFOR, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/193457
Kind Code:
A1
Abstract:
A semiconductor device and a fabrication method therefor, relating to the technical field of semiconductors. The semiconductor device comprises a plurality of storage units. The storage units comprise a first transistor and a second transistor. The first transistor and the second transistor are arranged at intervals on an upper surface of a substrate. The first transistor comprises a first source electrode, a first semiconductor layer, a first gate electrode, and a first drain electrode. The second transistor comprises a second source electrode, a second semiconductor layer, a second gate electrode, and a second drain electrode. The first semiconductor layer is at least located between the first gate electrode and the first source electrode, and is located between the first gate electrode and the first drain electrode. The first source electrode, the first gate electrode, and the first drain electrode are arranged at intervals on the substrate. The second semiconductor layer is at least located between the second gate electrode and the second source electrode, and is located between the second gate electrode and the second drain electrode. The second source electrode, the second gate electrode, and the second drain electrode are arranged at intervals on the substrate.

Inventors:
YIN XIAOMING (CN)
ZHOU JUN (CN)
WANG GUILEI (CN)
Application Number:
PCT/CN2022/136300
Publication Date:
October 12, 2023
Filing Date:
December 02, 2022
Export Citation:
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Assignee:
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
INNOTRON MEMORY CO LTD (CN)
International Classes:
H10B12/00
Foreign References:
US20210151437A12021-05-20
US20190115381A12019-04-18
CN110911396A2020-03-24
US20200066326A12020-02-27
US20170278883A12017-09-28
US20170287959A12017-10-05
CN101777557A2010-07-14
CN114267641A2022-04-01
Attorney, Agent or Firm:
AFD CHINA INTELLECTUAL PROPERTY LAW OFFICE (CN)
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