Title:
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/173515
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a forming method therefor. The forming method for the semiconductor device comprises the following steps: providing a substrate; etching the substrate to form first grooves and second grooves, which are located below the first grooves and are in communication with same; forming bit lines in the second grooves; forming, at the bottoms of the first grooves, isolation layers covering the bit lines; increasing the inner diameter of the first grooves above the isolation layers; and forming gate layers on side walls of the first grooves, the inner diameter of which have been increased. By means of the present disclosure, spaces for forming the gate layers are enlarged, a forming process for the gate layers is simplified, and the overall performance of a transistor is improved, thereby improving the yield of the semiconductor device.
Inventors:
SHAO GUANGSU (CN)
XIAO DEYUAN (CN)
QIU YUNSONG (CN)
LIU YOUMING (CN)
XIAO DEYUAN (CN)
QIU YUNSONG (CN)
LIU YOUMING (CN)
Application Number:
PCT/CN2022/085761
Publication Date:
September 21, 2023
Filing Date:
April 08, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242
Foreign References:
| US20070190766A1 | 2007-08-16 | |||
| US5817552A | 1998-10-06 | |||
| US20070246783A1 | 2007-10-25 | |||
| CN101471304A | 2009-07-01 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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