Title:
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/070529
Kind Code:
A1
Abstract:
A semiconductor device includes a semiconductor substrate, a doped region formed in the semiconductor substrate, a source/drain formed in the doped region, a conductive pad formed on the source/drain, a gate dielectric layer disposed over the semiconductor substrate and the doped region exposing the conductive pad, a gate formed on the gate dielectric layer, an insulation layer formed over the gate, the gate dielectric layer, and the conductive pad, and a contact formed in the insulation layer in electric contact with the conductive pad.
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Inventors:
CHEN LIANG (CN)
XU WENSHAN (CN)
XU WENSHAN (CN)
Application Number:
PCT/CN2021/127465
Publication Date:
May 04, 2023
Filing Date:
October 29, 2021
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L29/78
Foreign References:
| CN110034189A | 2019-07-19 | |||
| CN101872784A | 2010-10-27 | |||
| US20140131796A1 | 2014-05-15 | |||
| US20200258909A1 | 2020-08-13 | |||
| CN109755254A | 2019-05-14 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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