SEMICONDUCTOR DEVICE HAVING DOUBLE-GATE STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS

WIPO Patent Application WO/2023/024299

A1

Disclosed are a semiconductor device having a double-gate structure and a manufacturing method therefor, and an electronic apparatus comprising the semiconductor device. According to an embodiment, a semiconductor device comprises a vertical channel portion on a substrate; source/drain portions at the upper and lower ends of the channel portion with respect to the substrate, respectively; and a first gate stack on a first side of the channel portion in a first direction transverse to the substrate and a second gate stack on a second side of the channel portion opposite to the first side in the first direction. The distance between at least one of the upper edge and the lower edge of the end of the first gate stack close to the channel portion in the vertical direction and the corresponding source/drain portion is less than the distance between at least one edge, corresponding to the aforementioned at least one edge, among the upper edge and the lower edge of the end of the second gate stack close to the channel portion in the vertical direction and the corresponding source/drain.

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ZHU HUILONG (US)

PCT/CN2021/133509

March 02, 2023

November 26, 2021

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INST OF MICROELECTRONICS CAS (CN)

H01L29/786; H01L21/336; H01L27/088

CN111384156A	2020-07-07
CN112582464A	2021-03-30
CN111244161A	2020-06-05
CN104716171A	2015-06-17
US20130075811A1	2013-03-28

CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)

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