Title:
SEMICONDUCTOR DEVICE HAVING NEGATIVE DIFFERENTIAL TRANSCONDUCTANCE CHARACTERISTIC AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2020/111752
Kind Code:
A2
Abstract:
A semiconductor device having a negative differential transconductance characteristic according to an embodiment of the present invention comprises: a substrate; a gate electrode formed on the substrate; an insulation layer formed on the gate electrode; a source electrode material layer formed on the insulation layer; a semiconductor material layer formed on the insulation layer and heterogeneously bonded to the source electrode material layer; a source electrode formed on the source electrode material layer; and a drain electrode formed on the semiconductor material layer. The source electrode material layer has a work function adjustable depending on a gate voltage applied through the gate electrode and shows a negative differential transconductance characteristic, depending on a level of the gate voltage.
Inventors:
PARK JIN HONG (KR)
CHOI JAE WOONG (KR)
KIM KWAN HO (KR)
LEE SUNG JOO (KR)
LIM JI HYE (KR)
ANDREEV MAKSIM (KR)
CHOI JAE WOONG (KR)
KIM KWAN HO (KR)
LEE SUNG JOO (KR)
LIM JI HYE (KR)
ANDREEV MAKSIM (KR)
Application Number:
PCT/KR2019/016418
Publication Date:
June 04, 2020
Filing Date:
November 27, 2019
Export Citation:
Assignee:
UNIV SUNGKYUNKWAN RES BUSINESS FOUND (KR)
International Classes:
H01L45/00
Attorney, Agent or Firm:
SHIM, Kyoung-Shik et al. (KR)
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