SEMICONDUCTOR DEVICE, IMAGING DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Title:

SEMICONDUCTOR DEVICE, IMAGING DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2022/014118

Kind Code:

A1

Abstract:

The present invention reduces the parasitic capacitance in a silicon through electrode (TSV).　This semiconductor device is provided with a predetermined layer. A via vertically penetrates the predetermined layer. A conductor is in contact with an upper surface-side material and a lower surface-side material of the vertically penetrated layer. The conductor forms a hollow part between itself and the inner surface of the via without coming into contact with the inner surface of the via, said hollow part vertically penetrating the layer. At least one of the upper surface-side material and the lower surface-side material of the layer is a conductive material; and at least a part of the conductive material is provided with an opening to the hollow part. This opening is used for the purpose of supplying an etchant during etching.

Inventors:

GOCHO TETSUO (JP)

Application Number:

PCT/JP2021/016718

Publication Date:

January 20, 2022

Filing Date:

April 27, 2021

Export Citation:

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Assignee:

SONY SEMICONDUCTOR SOLUTIONS CORP (JP)

International Classes:

H01L21/3205; H01L21/768; H01L23/522; H01L23/532; H01L27/146

Foreign References:

JP2019075515A	2019-05-16
JP2016032087A	2016-03-07
JP2014512692A	2014-05-22
JP2013115382A	2013-06-10
US20120292782A1	2012-11-22
JP2015511765W

Other References: