Title:
SEMICONDUCTOR DEVICE INCLUDING OVERPASS-TYPE CHANNEL
Document Type and Number:
WIPO Patent Application WO/2023/090611
Kind Code:
A1
Abstract:
The present invention relates to an overpass-type semiconductor device comprising: a first gate having a fin of a predetermined height formed thereon; a charge storage layer formed on the first gate and the fin; a channel layer formed on a portion of the charge storage layer; a gate insulating layer formed on the channel layer; and a second gate formed on the gate insulating layer, wherein the fin protrudes vertically from the center of the first gate, and the channel overpasses the fin.
Inventors:
PARK BYUNG-GOOK (KR)
JANG TAE JIN (KR)
JANG TAE JIN (KR)
Application Number:
PCT/KR2022/013956
Publication Date:
May 25, 2023
Filing Date:
September 19, 2022
Export Citation:
Assignee:
SEOUL NAT UNIV R&DB FOUNDATION (KR)
International Classes:
H01L27/088; G06N3/063; H01L29/78
Foreign References:
| KR20210027995A | 2021-03-11 | |||
| KR20140079468A | 2014-06-26 | |||
| JP2019009209A | 2019-01-17 | |||
| KR20180072942A | 2018-07-02 | |||
| KR20180076314A | 2018-07-05 |
Attorney, Agent or Firm:
MAPS INTELLECTUAL PROPERTY LAW FIRM (KR)
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