Title:
SEMICONDUCTOR DEVICE JOINING MEMBER
Document Type and Number:
WIPO Patent Application WO/2020/130039
Kind Code:
A1
Abstract:
This semiconductor device joining member 10 is used to join a to-be-joined surface of a semiconductor device 11 and a to-be-joined surface of a substrate 12 on which said semiconductor device 11 is to be placed, includes a layer comprising an alloy 102 that contains, as main components, Sn and at least one selected from among Ag, Cu, and Au, and has a melting point of at least 500°C. The inside of said joining member has a plurality of voids 101, the volume of which accounts for 5-40% of the total volume of the joining member. The joining member is configured to have a thermal conductivity of at least 120 W/m·K and an electrical conductivity of at least 50% IACS after having undergone a heat cycle test in which a cycle of cooling to -40°C and heating to 300°C is repeated 300 times.
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Inventors:
FUKUI AKIRA (JP)
FUKUI TOSHIE (JP)
FUKUI TOSHIE (JP)
Application Number:
PCT/JP2019/049601
Publication Date:
June 25, 2020
Filing Date:
December 18, 2019
Export Citation:
Assignee:
SUPERUFO291 TEC (JP)
International Classes:
C22C5/02; B23K35/30; C22C5/06; C22C9/02; H01L21/52
Domestic Patent References:
| WO2011114751A1 | 2011-09-22 | |||
| WO2012077228A1 | 2012-06-14 |
Foreign References:
| JP2017157582A | 2017-09-07 |
Attorney, Agent or Firm:
KYOTO INTERNATIONAL PATENT LAW OFFICE (JP)
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