SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ADHESIVE FILM USED IN SEMICONDUCTOR DEVICE MANUFACTURING METHOD

WIPO Patent Application WO/2013/111775

A1

The purpose of the present invention is to provide a semiconductor device manufacturing method, whereby cutting reliability of an adhesive film can be improved and debris contamination due to the adhesive film can be suppressed. Provided is a semiconductor device manufacturing method which is provided with: a step wherein, after forming a groove (4S) on the front surface of a semiconductor wafer (4), a protective adhesive film (44) is adhered, the rear surface of the semiconductor wafer is ground, and the groove is exposed from the rear surface; a step wherein, after adhering the adhesive film on the rear surface of the semiconductor wafer, the protective adhesive film is peeled; and a step wherein a laser beam having a wavelength of 355 nm is radiated along the groove exposed from the adhesive film, and the adhesive film is cut. The adhesive film has (a) a light absorption coefficient of 40 cm-1 or more at a wavelength of 355 nm, (b) a tensile storage elastic modulus of 0.5-20 MPa at 50°C, and (c) a tensile storage elastic modulus of 0.3-7 MPa at 120°C, or a melt viscosity of 2,000 Pa∙s or more at 120°C.

TANAKA SHUMPEI (JP)
SHISHIDO YUICHIRO (JP)
ONISHI KENJI (JP)
ASAI FUMITERU (JP)

PCT/JP2013/051301

August 01, 2013

January 23, 2013

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NITTO DENKO CORP (JP)

H01L21/301; C09J7/10; C09J11/04; C09J133/04; C09J161/06; C09J163/00; H01L21/52

JP2009231779A	2009-10-08
JP2007220743A	2007-08-30

UNIUS PATENT ATTORNEYS OFFICE (JP)
Patent business corporation ユニアス international patent firm (JP)

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