Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2016/110956
Kind Code:
A1
Abstract:
This semiconductor device manufacturing method has a step for forming an oxynitride film on a substrate by performing predetermined times a cycle of non-simultaneously performing: a step for supplying a starting material gas to the substrate through a first nozzle; a step for supplying a nitriding gas to the substrate through a second nozzle; and a step for supplying an oxidizing gas to the substrate through a third nozzle. In the step for supplying the nitriding gas, an inert gas is supplied at a first flow rate through the first nozzle and/or the third nozzle, and in the step for supplying the oxidizing gas, the inert gas is supplied at a second flow rate through the second nozzle, said second flow rate being higher than the first flow rate.
Inventors:
YAMAKOSHI RISA (JP)
TERASAKI MASATO (JP)
OZAKI TAKASHI (JP)
AKAE NAONORI (JP)
HORITA HIDEKI (JP)
TERASAKI MASATO (JP)
OZAKI TAKASHI (JP)
AKAE NAONORI (JP)
HORITA HIDEKI (JP)
Application Number:
PCT/JP2015/050250
Publication Date:
July 14, 2016
Filing Date:
January 07, 2015
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/318; C23C16/455; H01L21/31; H01L21/316
Foreign References:
| JP2014060302A | 2014-04-03 | |||
| JP2014038923A | 2014-02-27 | |||
| JP2003045864A | 2003-02-14 | |||
| JP2013225660A | 2013-10-31 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
Masahiro Fukuoka (JP)
Masahiro Fukuoka (JP)
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