Title:
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/193823
Kind Code:
A1
Abstract:
According to the present invention, a power module (100), as a semiconductor device with high reliability having a circuit stably connected to a semiconductor element mounted on an insulating substrate having a curved main surface, comprises: an insulating substrate (10); a heat dissipation member (20); and an electrode plate (30). An IGBT (41) and a diode (42) are mounted on the insulating substrate (10). The heat dissipation member (20) is bonded to the insulating substrate (10) by first solder (51). The electrode plate (30) is disposed so as to overlap at least a part of the semiconductor element. The main surface of the insulating substrate (10) is curved so as to have a shape convex toward the heat dissipation member (20). The first solder (51) is thicker at the edges than at the center in a plan view. The semiconductor element is bonded to the electrode plate (30) by second solder (52).
Inventors:
FUJINO JUNJI (JP)
OGAWA MICHIO (JP)
KAWAZOE CHIKA (JP)
WADA FUMIO (JP)
ISHIKAWA SATORU (JP)
OGAWA MICHIO (JP)
KAWAZOE CHIKA (JP)
WADA FUMIO (JP)
ISHIKAWA SATORU (JP)
Application Number:
PCT/JP2021/012535
Publication Date:
September 30, 2021
Filing Date:
March 25, 2021
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/12; H01L23/29; H01L23/31; H01L23/36; H01L23/40; H01L23/48; H01L25/07; H01L25/18
Domestic Patent References:
| WO2018146933A1 | 2018-08-16 |
Foreign References:
| JPH10154774A | 1998-06-09 | |||
| JP2016115900A | 2016-06-23 | |||
| JP2012160548A | 2012-08-23 | |||
| JP2016058563A | 2016-04-21 | |||
| JP2000200865A | 2000-07-18 | |||
| JP2003209199A | 2003-07-25 | |||
| JP2014011236A | 2014-01-20 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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