Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/252445
Kind Code:
A1
Abstract:
Provided in the embodiments of the present application is a semiconductor device, comprising: an active area, located in a semiconductor substrate, wherein the active area comprises a central area, and a peripheral area surrounding the central area; a first strain layer, formed in the peripheral area in an embedded manner, wherein the first strain layer at least comprises a first sub-portion, a second sub-portion, a third sub-portion and a fourth sub-portion, the first sub-portion and the third sub-portion are distributed on two sides of the central area at an interval in a first direction, and the second sub-portion and the fourth sub-portion are distributed on the other two sides of the central area at an interval in a second direction, the first direction being different from the second direction; and a gate, located in the active area, wherein the gate extends in the first direction, and covers at least part of the central area, at least part of the first sub-portion, and at least part of the third sub-portion.
Inventors:
LEE TZUNG-HAN (CN)
Application Number:
PCT/CN2021/120235
Publication Date:
December 08, 2022
Filing Date:
September 24, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L29/78; H01L21/336
Foreign References:
| US20140048856A1 | 2014-02-20 | |||
| CN1956221A | 2007-05-02 | |||
| JP2010219440A | 2010-09-30 | |||
| CN103715092A | 2014-04-09 | |||
| US20030111699A1 | 2003-06-19 |
Other References:
See also references of EP 4120365A4
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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