Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/046095
Kind Code:
A1
Abstract:
Embodiments of the present application disclose a semiconductor device and a manufacturing method therefor. The semiconductor device comprises an active region, and further comprises: a substrate; an epitaxial structure; an electrode structure which comprises multiple ohmic contact electrodes; a first dielectric layer; an electrode connection line which is arranged on the side of the first dielectric layer away from the substrate and comprises an ohmic contact electrode connection line, the ohmic contact electrode connection line being electrically connected to the ohmic contact electrode; a second dielectric layer; and an electrode bonding pad which is arranged on the side of the second dielectric layer away from the substrate and comprises an ohmic contact electrode bonding pad. The ohmic contact electrode bonding pad is electrically connected to the ohmic contact electrode connection line, and at least a part of the ohmic contact electrode bonding pad is located in the active area. According to the semiconductor device provided in the present application, at least a part of the ohmic contact electrode bonding pad is arranged in the active region to reduce the parasitic capacitance generated between the ohmic contact electrode bonding pad and the substrate, thereby meeting the high requirements on input and output capacitors of the semiconductor device.
Inventors:
LV QIFENG (CN)
Application Number:
PCT/CN2022/120978
Publication Date:
March 30, 2023
Filing Date:
September 23, 2022
Export Citation:
Assignee:
DYNAX SEMICONDUCTOR INC (CN)
International Classes:
H01L29/778
Foreign References:
| CN112736136A | 2021-04-30 | |||
| CN102487054A | 2012-06-06 | |||
| CN106252310A | 2016-12-21 | |||
| US20210217882A1 | 2021-07-15 |
Attorney, Agent or Firm:
BEIJING BRIGHT IP AGENCY CO., LTD. (CN)
Download PDF: