Title:
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/078073
Kind Code:
A1
Abstract:
Disclosed in the present disclosure are a semiconductor device, and a manufacturing method therefor. The semiconductor device comprises: a substrate, a buffer layer, a channel layer and a barrier layer which are stacked successively; a cap layer, provided on the barrier layer; a gate, provided on the cap layer; a source, provided on the barrier layer; and a drain, provided on the barrier layer, the drain and the source being respectively arranged on two sides of the gate. The semiconductor device further comprises a plurality of P-type stacked layers, which are provided between the barrier layer and the cap layer in the direction from the substrate to the buffer layer, wherein each P-type stacked layer comprises a first P-type doped GaN layer provided close to the barrier layer and a first P-type doped layer provided on the first P-type doped GaN layer, and the doping concentration of the first P-type doped GaN layer is configured to decrease from the side close to first P-type doped layer to the side close to the substrate. The technical solution disclosed in the present disclosure can ameliorate the problem of mobility decreases of non-gate regions.
Inventors:
CHEN SHUAI (CN)
FANG YUTAO (CN)
XIA DEYANG (CN)
ZHANG JIE (CN)
FANG YUTAO (CN)
XIA DEYANG (CN)
ZHANG JIE (CN)
Application Number:
PCT/CN2023/107211
Publication Date:
April 18, 2024
Filing Date:
July 13, 2023
Export Citation:
Assignee:
HUNAN SANAN SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778; H01L21/335; H01L29/06; H01L29/10; H01L29/41
Foreign References:
| CN115528109A | 2022-12-27 | |||
| CN113851522A | 2021-12-28 | |||
| CN113054002A | 2021-06-29 | |||
| US20180166565A1 | 2018-06-14 | |||
| US20220310833A1 | 2022-09-29 |
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
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