Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2019/207996
Kind Code:
A1
Abstract:
A power module 20 comprises: a semiconductor chip 1; a ceramic substrate 3 that supports the semiconductor chip 1 and is provided with a wiring 3e on an upper surface 3a on which the semiconductor chip 1 is mounted; a solder 2 for joining the semiconductor chip 1 and the wiring 3e; a plurality of wires 6 for electrically connecting the semiconductor chip 1 and the ceramic substrate 3; and a sealing resin 9 for sealing the semiconductor chip 1 and the plurality of wires 6. In a plan view, part of an intermetallic compound 10 including a metal contained in the wiring 3e and a metal contained in the solder 2 protrudes outward from a region of the solder 2 and is exposed on the surface 3a.
Inventors:
MIYAZAKI TAKAAKI (JP)
SUMIYOSHI HIROAKI (JP)
KUSHIMA TAKAYUKI (JP)
KAWASE DAISUKE (JP)
IKEDA OSAMU (JP)
SUMIYOSHI HIROAKI (JP)
KUSHIMA TAKAYUKI (JP)
KAWASE DAISUKE (JP)
IKEDA OSAMU (JP)
Application Number:
PCT/JP2019/010158
Publication Date:
October 31, 2019
Filing Date:
March 13, 2019
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L21/52; B23K1/00; B23K1/19; B23K31/02; H01L23/12; H01L23/40; H01L25/07; H01L25/18; B23K101/40
Domestic Patent References:
| WO2011145176A1 | 2011-11-24 | |||
| WO2018042890A1 | 2018-03-08 |
Foreign References:
| JP2017117813A | 2017-06-29 |
Attorney, Agent or Firm:
TSUTSUI & ASSOCIATES (JP)
Download PDF:
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