Title:
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/149365
Kind Code:
A1
Abstract:
Deterioration of the magnetic performance of a magnetoresistance effect element is suppressed. This semiconductor device comprises a magnetoresistance effect element that has: a first magnetic film; a tunnel barrier film provided on this first magnetic film; a second magnetic film provided on this tunnel barrier film; a first magnetic oxide film formed by oxidation of the edge part of the first magnetic film on the side of the first magnetic film; and a second magnetic oxide film formed by oxidation of a second magnetic film on the side of the second magnetic film.
Inventors:
OKAMOTO MASAKI (JP)
Application Number:
PCT/JP2020/044916
Publication Date:
July 29, 2021
Filing Date:
December 02, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01F10/12; H01L21/8239; H01L27/105; H01L43/08; H01L43/10; H01L43/12
Foreign References:
| JP2016018964A | 2016-02-01 | |||
| JP2012199431A | 2012-10-18 | |||
| JP2012064901A | 2012-03-29 | |||
| JP2018078257A | 2018-05-17 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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