Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/000247
Kind Code:
A1
Abstract:
A semiconductor device (1) is provided. The semiconductor device (1) comprises: a substrate (10); a first nitride semiconductor layer (12) on the substrate (10); a second nitride semiconductor layer (13) on the first nitride semiconductor layer (12) and having a band gap greater than a band gap of the first nitride semiconductor layer (12); a group III-V dielectric layer (14) disposed on the second nitride semiconductor layer (13); a gate electrode (18) disposed on the second nitride semiconductor layer (13); and a first passivation layer (16) disposed on the group III-V dielectric layer (14), wherein the group III-V dielectric layer (14) is separated from the gate electrode (18) by the first passivation layer (16).
Inventors:
ZHANG ANBANG (CN)
WONG KING YUEN (CN)
WONG KING YUEN (CN)
Application Number:
PCT/CN2020/099172
Publication Date:
January 06, 2022
Filing Date:
June 30, 2020
Export Citation:
Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/778; H01L21/335; H01L29/06
Foreign References:
| US20150060873A1 | 2015-03-05 | |||
| CN106298882A | 2017-01-04 | |||
| CN107623030A | 2018-01-23 | |||
| US20140264451A1 | 2014-09-18 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
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