Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/110149
Kind Code:
A1
Abstract:
A semiconductor device comprises: a substrate (10); a first nitride semiconductor layer (12) disposed on the substrate (10); a second nitride semiconductor layer (14) disposed on the first nitride semiconductor layer (12) and having a bandgap greater than that of the first nitride semiconductor layer (12); an ohmic contact (16) disposed on the first nitride semiconductor layer (12); and a spacer (18) disposed adjacent to a sidewall of the ohmic contact (16).
More Like This:
| JP5576731 | Field effect transistor |
| JP2009076694 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| JP2000243947 | NITRIDE COMPOUND SEMICONDUCTOR DEVICE |
Inventors:
CHANG MING-HONG (CN)
RAO JIAN (CN)
ZHANG YULONG (CN)
RAO JIAN (CN)
ZHANG YULONG (CN)
Application Number:
PCT/CN2020/132793
Publication Date:
June 02, 2022
Filing Date:
November 30, 2020
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778
Foreign References:
| US20070018199A1 | 2007-01-25 | |||
| US20080128753A1 | 2008-06-05 | |||
| US20180323296A1 | 2018-11-08 | |||
| US20140299989A1 | 2014-10-09 | |||
| US20160020313A1 | 2016-01-21 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
Download PDF: