SEMICONDUCTOR DEVICE MANUFACTURING METHOD

WIPO Patent Application WO/2013/042491

A1

A semiconductor device manufacturing method comprises: a step of preparing a structure whereupon a copper film is formed such that a trench part is filled therewith via a barrier film upon an inter-layer insulation film having a trench upon a substrate; a step of removing the copper film of the structure to the barrier film interface with chemical mechanical polishing and forming copper wiring within the trench part; a step of etching the copper wiring and moving back the surface thereof further than the inter-layer insulation film surface; and a step of removing the barrier film by the chemical mechanical polishing. When moving back the surface of the copper wiring further than the inter-layer insulation film surface, the structure is positioned in a vacuum state organic compound atmosphere, an oxygen gas cluster ion beam is projected on a face including the copper wiring surface of the structure. With the oxygen gas cluster ions therein, the copper on the surface of the copper wiring is oxidized, forming copper oxide, and the copper oxide reacts with the organic compound, anisotropically etching the copper wiring.

HARA KENICHI (JP)
HAYAKAWA TAKASHI (JP)
OZAWA MARIKO (JP)

PCT/JP2012/070661

March 28, 2013

August 14, 2012

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TOKYO ELECTRON LTD (JP)
HARA KENICHI (JP)
HAYAKAWA TAKASHI (JP)
OZAWA MARIKO (JP)

H01L21/768; H01L21/3205; H01L23/532

JP2004200684A	2004-07-15
JP2009043975A	2009-02-26
JP2010027788A	2010-02-04
JP2006120664A	2006-05-11

TAKAYAMA HIROSHI (JP)
Hiroshi Takayama (JP)

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