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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2013/058020
Kind Code:
A1
Abstract:
The present invention improves current density and also improves reliability of bonding strength of wire bonding. A semiconductor device (1) is provided with a semiconductor element (1a) and an external circuit (1b), which are mounted on a base (1d). The semiconductor element (1a) has a copper electrode (1a-1), i.e., an electrode coated with copper. The copper electrode (1a-1) of the semiconductor element (1a) and the external circuit (1b) are bonded to each other using a copper wire (1c). The thickness of the copper electrode (1a-1) is 5-30 μm. The copper electrode is coated by means of a plating method, a sputtering method or a deposition method. The diameter of the wire is 100-400 μm.

Inventors:
MOMOSE FUMIHIKO (JP)
SAITOU TAKASHI (JP)
KIDO KAZUMASA (JP)
NISHIMURA YOSHITAKA (JP)
HORASAWA TAKAYASU (JP)
Application Number:
PCT/JP2012/072031
Publication Date:
April 25, 2013
Filing Date:
August 30, 2012
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
MOMOSE FUMIHIKO (JP)
SAITOU TAKASHI (JP)
KIDO KAZUMASA (JP)
NISHIMURA YOSHITAKA (JP)
HORASAWA TAKAYASU (JP)
International Classes:
H01L21/60
Foreign References:
JP2009177104A2009-08-06
JPH01187832A1989-07-27
JPS61253824A1986-11-11
JPS62123731A1987-06-05
Attorney, Agent or Firm:
HATTORI, KIYOSHI (JP)
Kiyoshi Hattori (JP)
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Claims: