SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

WIPO Patent Application WO/2020/192303

A1

Provided in the embodiments of the present application are a semiconductor device and a manufacturing method. The method comprises: successively forming a channel layer and a barrier layer, which are made of gallium nitride materials, on a substrate, and then preparing, based on an ohmic contact region formed on the barrier layer, through holes which penetrate the barrier layer, so as to expose part of the channel layer; and then depositing a plurality of ohmic metal layers on the barrier layer, and the plurality of deposited ohmic metal layers contacting the channel layer through the through holes, wherein an ohmic metal layer, which is in direct contact with the channel layer, of the plurality of ohmic metal layers is a tantalum metal layer. By means of preparing the through holes which penetrate the barrier layer, and depositing the plurality of ohmic metal layers at positions of the through holes in the barrier layer, distances between the ohmic metal layers and two-dimensional electron gas can be reduced, such that the temperature required for subsequent annealing is relatively low, and in conjunction with the characteristics of the tantalum metal layer, ohmic contact resistance which is subsequently formed can be reduced.

LIN KECHUANG (CN)
ZHOU PENGHUI (CN)
LIU SHENGHOU (CN)
LIU CHENG (CN)
LI MIN (CN)
ZHAO JIE (CN)
LU YIFENG (CN)
CAI XIANQING (CN)
YANG JIAN (CN)

PCT/CN2020/075500

October 01, 2020

February 17, 2020

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XIAMEN SANAN INTEGRATED CIRCUIT CO LTD (CN)

H01L29/78; H01L21/335; H01L29/10

CN109950317A	2019-06-28
CN108258043A	2018-07-06
CN106158923A	2016-11-23
JP2002016245A	2002-01-18

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