Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/059482
Kind Code:
A1
Abstract:
This semiconductor device manufacturing method comprises: a step for forming a dielectric film on a semiconductor substrate or on a lower electrode formed on the semiconductor substrate; a step for selectively attaching metal to a predetermined region on a surface of the dielectric film; a step for performing heat processing on the metal to form an insulating metal oxide film in the predetermined region on the surface of the dielectric film; and a step for forming an upper electrode on the dielectric film with the metal oxide film formed in the predetermined region on the surface of the dielectric film.
Inventors:
AKIYAMA KOJI (JP)
TAMURA CHIHIRO (JP)
GAUBERT PHILIPPE (JP)
TAMURA CHIHIRO (JP)
GAUBERT PHILIPPE (JP)
Application Number:
PCT/JP2021/032045
Publication Date:
March 24, 2022
Filing Date:
September 01, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/316; H01L21/336; H01L21/822; H01L27/04; H01L29/78
Foreign References:
| JP2007294874A | 2007-11-08 | |||
| JPS56161669A | 1981-12-12 | |||
| JP2005079186A | 2005-03-24 | |||
| US20080246078A1 | 2008-10-09 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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