Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/176887
Kind Code:
A1
Abstract:
Provided is a semiconductor device comprising: a first conductive drift region provided in a semiconductor substrate having a front surface and a back surface; and a first conductive buffer region provided closer to the back surface of the semiconductor substrate than the drift region in the depth direction of the semiconductor substrate, wherein the buffer region has a concentration peak group including one or more concentration peaks of doping concentration, the concentration peak group includes a first concentration peak provided closest to the back surface of the semiconductor substrate among the one or more concentration peaks in the depth direction of the semiconductor substrate, and the semiconductor substrate includes a first hydrogen peak, which is the atomic density peak of hydrogen, provided at the same depth as the depth position of the first concentration peak, or closer to the back surface of the semiconductor substrate than the depth position of the first concentration peak in the depth direction of the semiconductor substrate.
Inventors:
UCHIDA MISAKI (JP)
YOSHIMURA TAKASHI (JP)
YAGUCHI SHUNTARO (JP)
YOSHIMURA TAKASHI (JP)
YAGUCHI SHUNTARO (JP)
Application Number:
PCT/JP2023/010080
Publication Date:
September 21, 2023
Filing Date:
March 15, 2023
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/739; H01L21/265; H01L21/322; H01L21/336; H01L21/8234; H01L27/06; H01L29/06; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| WO2021029285A1 | 2021-02-18 | |||
| WO2020138218A1 | 2020-07-02 | |||
| WO2018135448A1 | 2018-07-26 |
Foreign References:
| JP2020205408A | 2020-12-24 | |||
| JP2018125537A | 2018-08-09 | |||
| JP2022015861A | 2022-01-21 | |||
| JP2015170724A | 2015-09-28 | |||
| US20060081923A1 | 2006-04-20 |
Attorney, Agent or Firm:
RYUKA & PARTNERS (JP)
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