Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/176932
Kind Code:
A1
Abstract:
This semiconductor device comprises a semiconductor substrate of a first conductivity type, a semiconductor layer of the first conductivity type, a first electrode, a second electrode, a first trench, a second trench, an insulating layer, a third electrode, and a well region of a second conductivity type. The well region includes a first region that is adjacent to the first trench, a second region that is adjacent to the second trench, and a third region that is located between the first region and the second region in a second direction. The impurity concentration of the first region and the impurity concentration of the second region are both lower than the impurity concentration of the third region.
Inventors:
YOSHIDA RYO (JP)
TAKIGAWA YUTO (JP)
TAKIGAWA YUTO (JP)
Application Number:
PCT/JP2023/010366
Publication Date:
September 21, 2023
Filing Date:
March 16, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/868; H01L29/06; H01L29/41; H01L29/47; H01L29/861; H01L29/872
Foreign References:
| JPH118399A | 1999-01-12 | |||
| JP2011029600A | 2011-02-10 | |||
| JP2020174167A | 2020-10-22 | |||
| JP2004158844A | 2004-06-03 | |||
| JP2022022449A | 2022-02-03 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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