Title:
SEMICONDUCTOR DEVICE, MEMORY DEVICE, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/074967
Kind Code:
A1
Abstract:
Provided is a semiconductor device having a high storage density. This semiconductor device has a first layer and a second layer above the first layer. The first layer has first to fourth conductors, first to fifth insulators, and a first semiconductor, and the second layer has fifth to seventh conductors, sixth and seventh insulators, and a second semiconductor. The first insulator, the second conductor, the second insulator, and the third conductor are formed in said order on the first conductor and are each provided with a first opening of which the bottom surface is the first semiconductor. In addition, the first semiconductor, the fourth insulator, and the fourth conductor are formed in said order in the first opening. In addition, the third insulator is positioned on the side surfaces of the third conductor and on the upper surface of the second insulator. The fifth conductor is positioned on the upper surface of the fourth conductor and the upper surface of the fifth insulator. The sixth insulator and the sixth conductor are formed in said order on the fifth conductor and are each provided with a second opening of which the bottom surface is the fifth conductor. In addition, the second semiconductor, the seventh insulator, and the seventh conductor are formed in said order in the second opening.
Inventors:
KIMURA HAJIME (JP)
YAMAZAKI SHUNPEI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2023/059838
Publication Date:
April 11, 2024
Filing Date:
October 02, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B12/00; H01L21/336; H01L29/788; H01L29/792; H10B41/70
Domestic Patent References:
| WO2020139761A1 | 2020-07-02 |
Foreign References:
| US20200279850A1 | 2020-09-03 | |||
| JP2017168809A | 2017-09-21 | |||
| JP2013214729A | 2013-10-17 | |||
| JP2022143580A | 2022-10-03 |
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