Title:
SEMICONDUCTOR DEVICE, METHOD FOR CONTROLLING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/052952
Kind Code:
A1
Abstract:
A semiconductor device according to the present disclosure comprises: a drift layer including a first pillar region of a first conduction type alternating with a second pillar region of a second conduction type; a base region of the second conduction type disposed on the first main surface side of the drift layer; a gate insulating film disposed so as to be in contact with the base region; a gate electrode disposed on the gate insulating film; a charge-holding region of the first conduction type disposed between the base region and the second pillar region; and an emitter region of the first conduction type disposed on the surface layer, on the first main surface side, of the base region. The lower end of the second pillar region, which is the end lying on the second main surface side, is located further toward the second main surface side than the lower end of the first pillar region, which is the end lying on the second main surface side. When the width of the upper end of the second pillar region, which is the end lying on the first main surface side, is expressed by wp1, the width of a portion of the second pillar region which lies in the same position as the lower end of the first pillar region is expressed by wp2, and the width of the lower end of the second pillar region is expressed by wp3, then wp3>wp2 and wp1>wp2.
Inventors:
TAMAKI TOMOHIRO (JP)
HASHIMOTO MAKOTO (JP)
SUDO YOHEI (JP)
DEGUCHI TADAYOSHI (JP)
KAWASE MITSUHISA (JP)
HASHIMOTO MAKOTO (JP)
SUDO YOHEI (JP)
DEGUCHI TADAYOSHI (JP)
KAWASE MITSUHISA (JP)
Application Number:
PCT/JP2022/033226
Publication Date:
March 14, 2024
Filing Date:
September 05, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
NISSHINBO MICRO DEVICES INC (JP)
NISSHINBO MICRO DEVICES INC (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/739
Foreign References:
| US20160260799A1 | 2016-09-08 | |||
| CN112864219A | 2021-05-28 | |||
| JP2019054169A | 2019-04-04 | |||
| JP2021057552A | 2021-04-08 | |||
| JP2017050423A | 2017-03-09 | |||
| JP2018041934A | 2018-03-15 | |||
| JP2000208527A | 2000-07-28 | |||
| JP2007012858A | 2007-01-18 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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