Title:
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/222062
Kind Code:
A1
Abstract:
Provided is a semiconductor device having reduced transistor characteristics variations. The semiconductor device comprises a transistor, first and second electrical conductors, and first to third insulators. The transistor and the first electrical conductor are disposed on the first insulator. The transistor includes an oxide semiconductor. The second insulator is disposed on the transistor. The first electrical conductor has a region not overlapping the second insulator. The third insulator is disposed over the first electrical conductor, the transistor, and the second insulator. The second electrical conductor is disposed on the third insulator and at least partially overlaps the first electrical conductor.
Inventors:
MATSUZAKI TAKANORI (JP)
NEI KOSEI
NEI KOSEI
Application Number:
PCT/IB2020/053525
Publication Date:
November 05, 2020
Filing Date:
April 15, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/108; H01L27/1156
Foreign References:
| JP2017120896A | 2017-07-06 | |||
| JP2017228777A | 2017-12-28 | |||
| JP2018133570A | 2018-08-23 | |||
| JP2016111352A | 2016-06-20 | |||
| JP2015188064A | 2015-10-29 |
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