Title:
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/109923
Kind Code:
A1
Abstract:
Provided is a semiconductor device with good reliability. A first conductor and a second conductor are provided in contact with a first oxide thereon; a first insulator is provided to cover the first oxide, the first conductor, and the second conductor; the first insulator has an opening; the first oxide is exposed on the bottom of the opening; the side surface of the first conductor and the side surface of the second conductor are exposed on the side surface of the opening; in the opening, a second oxide is provided in contact with the first oxide, the side surface of the first conductor, and the second conductor; in the opening, a second insulator is provided through the second oxide; in the opening, a third conductor is provided through the second insulator; and the lower end portions of the side surface of the first conductor and the side surface of the second conductor are in contact with an ellipse or circle having a center above the first oxide.
Inventors:
YAMAZAKI SHUNPEI (JP)
TAKAHASHI ERIKA (JP)
SUZAWA HIDEOMI (JP)
SASAGAWA SHINYA (JP)
TAKAHASHI ERIKA (JP)
SUZAWA HIDEOMI (JP)
SASAGAWA SHINYA (JP)
Application Number:
PCT/IB2019/059911
Publication Date:
June 04, 2020
Filing Date:
November 19, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/8234; H01L21/336; H01L21/8242; H01L27/06; H01L27/088; H01L27/108; H01L27/1156; H01L29/786; H01L29/788; H01L29/792
Foreign References:
| JP2016167584A | 2016-09-15 | |||
| JP2016066793A | 2016-04-28 | |||
| JP2010135780A | 2010-06-17 |
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