Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRIC POWER CONVERTER
Document Type and Number:
WIPO Patent Application WO/2023/188560
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device, a method for manufacturing a semiconductor device, and an electric power converter, which make it possible to prevent an increase in an on-voltage of an IGBT, and to improve the reverse recovery characteristics of a diode portion with a simpler process. A semiconductor device 100 (RC-IGBT) according to the present invention comprises an RC-IGBT having an IGBT portion and a diode portion in one chip, characterized in that a body layer 11 of the diode portion is formed shallower than a body layer 10 of the IGBT portion, a lifetime control layer 8 of the IGBT portion is formed inside the body layer 10 of the IGBT portion, and the lifetime control layer 8 of the diode portion is formed inside an n-drift layer 4 under the body layer 11 of the diode portion.
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Inventors:
SHIRAISHI MASAKI (JP)
Application Number:
PCT/JP2022/045441
Publication Date:
October 05, 2023
Filing Date:
December 09, 2022
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L29/78; H01L21/329; H01L21/336; H01L29/739; H01L29/861; H01L29/868
Foreign References:
| JP2008004866A | 2008-01-10 | |||
| JP2017201644A | 2017-11-09 | |||
| JP2016157882A | 2016-09-01 | |||
| JP2017139393A | 2017-08-10 | |||
| JP2021182614A | 2021-11-25 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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