Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/1998/011601
Kind Code:
A1
Abstract:
A nitride film (4) which is patterned into the reverse pattern of a foundation pattern is formed on a silicon oxide film (3) which is so formed as to cover the steps of a semiconductor substrate (1) and polished by CMP. At this time, the speed of polishing the silicon nitride film (4) by CMP is slower than the speed of polishing the silicon oxide film (3) by the CMP and the thickness of the silicon nitride film (4) is so determined as to be a value of the depth of the step x (the polishing speed of the silicon nitride film (4) / the polishing speed of the silicon oxide film).
Inventors:
NONAKA YUSUKE (JP)
HASHIMOTO TAKASHI (JP)
MITANI SHINICHIRO (JP)
HASHIMOTO TAKASHI (JP)
MITANI SHINICHIRO (JP)
Application Number:
PCT/JP1997/002264
Publication Date:
March 19, 1998
Filing Date:
June 30, 1997
Export Citation:
Assignee:
HITACHI LTD (JP)
NONAKA YUSUKE (JP)
HASHIMOTO TAKASHI (JP)
MITANI SHINICHIRO (JP)
NONAKA YUSUKE (JP)
HASHIMOTO TAKASHI (JP)
MITANI SHINICHIRO (JP)
International Classes:
H01L21/3105; (IPC1-7): H01L21/304; H01L21/321
Foreign References:
| JPH06295908A | 1994-10-21 | |||
| JPH0362946A | 1991-03-19 | |||
| JPH07142432A | 1995-06-02 | |||
| JPH05315441A | 1993-11-26 | |||
| JPH0964045A | 1997-03-07 | |||
| JPH09172016A | 1997-06-30 |
Attorney, Agent or Firm:
Tsutsui, Yamato (N.S. Excel 301 22-45, Nishishinjuku 7-chom, Shinjuku-ku Tokyo 160, JP)
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