SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Title:

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2011/043110

Kind Code:

A1

Abstract:

Disclosed is a semiconductor device for a large current, which does not generate kink phenomenon even if a drain voltage is increased after reducing on-resistance, increasing mobility and improving pinch-off characteristics. A method for manufacturing the semiconductor device is also disclosed. The semiconductor device is provided with: a GaN laminated body (15) which is provided with an opening (28); a regrown layer (27) including a channel; a gate electrode (G); a source electrode (S); and a drain electrode (D). The regrown layer (27) includes an electron transit layer (22) and an electron supply layer (26), the GaN laminated body includes a p-type GaN layer (6) which has the end surface thereof covered in the opening with the regrown layer, and the p-type GaN layer is provided with a p-portion electrode (11) in ohmic contact with the p-type GaN layer.

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Inventors:

OKADA MASAYA (JP)
KIYAMA MAKOTO (JP)

Application Number:

PCT/JP2010/060738

Publication Date:

April 14, 2011

Filing Date:

June 24, 2010

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)
OKADA MASAYA (JP)
KIYAMA MAKOTO (JP)

International Classes:

H01L21/336; H01L29/80; H01L21/338; H01L29/12; H01L29/778; H01L29/78; H01L29/812

Foreign References:

JP2004260140A	2004-09-16
JP2008053449A	2008-03-06
JP2008041834A	2008-02-21
JP2006286942A	2006-10-19
JP2008091595A	2008-04-17

Other References: