Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/017746
Kind Code:
A1
Abstract:
Provided is a semiconductor element having, while maintaining the same integrability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. By combining the MOSFET and a tunnel bipolar transistor having a tunnel junction, a semiconductor element is configured that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.
Inventors:
HISAMOTO DIGH (JP)
SAITO SHINICHI (JP)
SHIMA AKIO (JP)
YOSHIMOTO HIROYUKI (JP)
SAITO SHINICHI (JP)
SHIMA AKIO (JP)
YOSHIMOTO HIROYUKI (JP)
Application Number:
PCT/JP2011/064060
Publication Date:
February 09, 2012
Filing Date:
June 20, 2011
Export Citation:
Assignee:
HITACHI LTD (JP)
HISAMOTO DIGH (JP)
SAITO SHINICHI (JP)
SHIMA AKIO (JP)
YOSHIMOTO HIROYUKI (JP)
HISAMOTO DIGH (JP)
SAITO SHINICHI (JP)
SHIMA AKIO (JP)
YOSHIMOTO HIROYUKI (JP)
International Classes:
H01L21/8249; H01L21/331; H01L21/8234; H01L21/8238; H01L21/8244; H01L21/8247; H01L27/06; H01L27/088; H01L27/092; H01L27/11; H01L27/115; H01L29/66; H01L29/732; H01L29/78; H01L29/786; H01L29/788; H01L29/792
Foreign References:
| JPH07297394A | 1995-11-10 | |||
| JPS622650A | 1987-01-08 | |||
| JPS5458378A | 1979-05-11 | |||
| JP2009290095A | 2009-12-10 | |||
| JPH08264726A | 1996-10-11 | |||
| JPH03203263A | 1991-09-04 |
Other References:
DIGH HISAMOTO ET AL.: "CxFET:A Novel Steep Subthreshold Swing CMOS featuring a Tunnel- Injection Bipolar Transistor and MOSFET Device Complex", IEDM'2010, December 2010 (2010-12-01), pages 233 - 236
Attorney, Agent or Firm:
TSUTSUI, YAMATO (JP)
Tsutsui Daiwa (JP)
Tsutsui Daiwa (JP)
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Claims: