Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2013/183677
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention includes a first conductivity-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10nm – 150nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5nm. A method for manufacturing a semiconductor device according to the present invention includes: a step for forming a Schottky metal, comprising molybdenum and having a thickness of 10nm – 150nm, on the surface of a first conductivity-type SiC semiconductor layer; and a step for heat treating the Schottky metal whilst the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5nm.
Inventors:
KAWAKAMI YASUHIRO (JP)
Application Number:
PCT/JP2013/065603
Publication Date:
December 12, 2013
Filing Date:
June 05, 2013
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/47; H01L21/329; H01L29/872
Foreign References:
| JP2005311347A | 2005-11-04 | |||
| JP2007149839A | 2007-06-14 | |||
| JP2011023508A | 2011-02-03 | |||
| JP2009545885A | 2009-12-24 | |||
| JP2006344688A | 2006-12-21 | |||
| JP2008518445A | 2008-05-29 | |||
| JP2011176015A | 2011-09-08 | |||
| JP2005079339A | 2005-03-24 | |||
| JP2011009797A | 2011-01-13 |
Other References:
INTERNET CITATION: "TEM to STEM no Chigai (Tsukaiwake ni Tsuite)", NANO SCIENCE KABUSHIKI KAISHA, 2010, XP055178719, Retrieved from the Internet [retrieved on 20130830]
Attorney, Agent or Firm:
INAOKA, Kosaku et al. (JP)
Kosaku Inaoka (JP)
Kosaku Inaoka (JP)
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