SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Title:

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2014/050590

Kind Code:

A1

Abstract:

A semiconductor device having a groove provided in a semiconductor substrate, a gate insulating film provided so as to cover an inside surface of the groove, a first conductive film provided inside the groove in a position in which a first upper end surface is lower than the outer surface of the semiconductor substrate, a second conductive film provided inside the groove in a position that protrudes beyond the first upper end surface and in which a second upper end surface is higher than the outer surface of the semiconductor substrate, and a cap insulating film provided inside the groove so as to cover a protruding part of the second conductive film that protrudes beyond the first upper end surface.

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Inventors:

NIITSUMA KAZUNORI (JP)

Application Number:

PCT/JP2013/074676

Publication Date:

April 03, 2014

Filing Date:

September 12, 2013

Export Citation:

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Assignee:

PS4 LUXCO SARL (LU)
NIITSUMA KAZUNORI (JP)

International Classes:

H01L21/336; H01L21/3205; H01L21/768; H01L21/8242; H01L23/522; H01L23/532; H01L27/108; H01L29/41; H01L29/423; H01L29/49; H01L29/78

Foreign References:

JP2011233582A	2011-11-17
JP2007088458A	2007-04-05
JP2004095745A	2004-03-25