Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2016/067414
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor device having a solder bonding structure wherein both improved conductivity with respect to an external electrode and high reliability of the device are achieved. In the present invention, a semiconductor element upper solder (21) is formed to extend from a solder bonding region (R11h) of a surface electrode (11) to a solder bonding region (R31h) of an external electrode (31). The external electrode (31) has a downwardly extending portion (31a) that protrudes further toward the surface side of the surface electrode (11) than other regions. The semiconductor element upper solder (21) has an end surface shape including: a fillet (F1) that is bent upward in the direction toward a solder center point from the surface of the surface electrode (11); and a fillet (F2) that is bent downward in the direction toward the solder center point from the surface of the external electrode (31).
More Like This:
WO/2013/162519 | SUSPENDED INDUCTOR MICROELECTRONIC STRUCTURES |
JPS58158457 | 【考案の名称】ミニモ-ルド型ダイオ-ド |
Inventors:
NAKATA YOSUKE (JP)
ISHIHARA MIKIO (JP)
KAWASE TATSUYA (JP)
IMOTO YUJI (JP)
ASADA SHINSUKE (JP)
FUJINO JUNJI (JP)
ISHIHARA MIKIO (JP)
KAWASE TATSUYA (JP)
IMOTO YUJI (JP)
ASADA SHINSUKE (JP)
FUJINO JUNJI (JP)
Application Number:
PCT/JP2014/078926
Publication Date:
May 06, 2016
Filing Date:
October 30, 2014
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/48; H01L23/50
Foreign References:
JPH02126659A | 1990-05-15 | |||
JPH05315490A | 1993-11-26 | |||
JP2004228461A | 2004-08-12 | |||
JP2012156450A | 2012-08-16 | |||
JP2007019412A | 2007-01-25 | |||
JP2006173250A | 2006-06-29 | |||
JP2010050395A | 2010-03-04 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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