Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2016/157616
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a semiconductor device, said method being characterized by being provided with: a step for forming, by means of a plating method, a Cu wiring electrode (17) on a semiconductor element (18) having a wide bandgap semiconductor as a base material; a reduction step for reducing the Cu wiring electrode (17) under NH3 atmosphere; a heating step for heating the Cu wiring electrode (17) at the same time when performing the reduction step; a step for forming, after the heating step, a diffusion prevention film (11) that covers the Cu wiring electrode (17); and a sealing step for covering the diffusion prevention film (11) with an organic resin film (10).
Inventors:
YOSHIDA MOTORU (JP)
OKABE HIROAKI (JP)
SUGAHARA KAZUYUKI (JP)
OKABE HIROAKI (JP)
SUGAHARA KAZUYUKI (JP)
Application Number:
PCT/JP2015/083340
Publication Date:
October 06, 2016
Filing Date:
November 27, 2015
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/28; H01L21/312; H01L21/318; H01L21/3205; H01L21/329; H01L21/768; H01L23/522; H01L23/532; H01L29/06; H01L29/47; H01L29/872
Foreign References:
| JP2000164709A | 2000-06-16 | |||
| JP2004063980A | 2004-02-26 | |||
| JP2002217199A | 2002-08-02 | |||
| JP2014110362A | 2014-06-12 | |||
| JP2010003767A | 2010-01-07 | |||
| JP2013182936A | 2013-09-12 |
Attorney, Agent or Firm:
INABA, Tadahiko et al. (JP)
Tadahiko Inaba (JP)
Tadahiko Inaba (JP)
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