Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/169086
Kind Code:
A1
Abstract:
The present invention relates to a semiconductor device that is provided with: a semiconductor layer disposed on a semiconductor substrate; a first semiconductor region that is provided in an upper layer portion of the semiconductor layer; a second semiconductor region that is provided in an upper layer portion of the first semiconductor region; a gate insulating film; a gate electrode; a first main electrode, which is provided on an interlayer insulating film covering the gate electrode, and which is electrically connected to the second semiconductor region via a contact hole; and a second main electrode that is disposed on a second main surface of the semiconductor substrate. The first main electrode has: a base electrode film connected to the second semiconductor region via the contact hole; and a copper film that is provided on the base electrode film, at least a part of said copper film including a stress mitigation layer wherein the crystal grain size is smaller than the crystal grain sizes of other parts of the copper film.
Inventors:
SUGAHARA KAZUYUKI (JP)
OKABE HIROAKI (JP)
YOSHIDA MOTORU (JP)
OKABE HIROAKI (JP)
YOSHIDA MOTORU (JP)
Application Number:
PCT/JP2017/003750
Publication Date:
October 05, 2017
Filing Date:
February 02, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L21/28; H01L21/3205; H01L21/336; H01L21/76; H01L21/768; H01L23/522; H01L29/12; H01L29/739
Foreign References:
| JPS6376456A | 1988-04-06 | |||
| JP5834189B2 | 2015-12-16 | |||
| JP2000031095A | 2000-01-28 | |||
| JP2006054278A | 2006-02-23 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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