Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/249179
Kind Code:
A1
Abstract:
Provided are a semiconductor device and a method for manufacturing same. The method comprises: (S102) acquiring a substrate (102) on which a first device region (1), a second device region (2) and a high-k gate dielectric layer film (106) are formed; (S104) forming a barrier layer structure (200) covering the high-k gate dielectric layer film of the second device region on the substrate; (S106) forming a cover layer film (114) comprising a first metal element on the substrate; and (S108) diffusing the first metal element in the cover layer film to the high-k gate dielectric layer film of the first device region by means of an annealing process, and the barrier layer structure preventing the first metal element from diffusing to the high-k gate dielectric layer film of the second device region, the first device region and the second device region being device regions with opposite conductive types. According to the present application, there are fewer process steps of different dielectric constants of the high-k gate dielectric layers of the first device region and the second device region and the production cost is low.
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Inventors:
BAI JIE (CN)
YOU KANG (CN)
YOU KANG (CN)
Application Number:
PCT/CN2021/095643
Publication Date:
December 16, 2021
Filing Date:
May 25, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8238; H01L21/3105
Foreign References:
| US20100279496A1 | 2010-11-04 | |||
| US20120049288A1 | 2012-03-01 | |||
| US20090212371A1 | 2009-08-27 | |||
| CN102110650A | 2011-06-29 | |||
| CN106531785A | 2017-03-22 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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