Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2022/249578
Kind Code:
A1
Abstract:
The present invention improves the performance of a semiconductor device. A semiconductor device 1 is provided with: a die pad 2a made of an electrically conductive material; a semiconductor chip CH1 provided on an upper surface of the die pad 2a; and a semiconductor chip CH3. The semiconductor chip CH1 includes a gate pad electrode GP1 and a drain pad electrode DP1. The semiconductor chip CH3 includes a pad electrode AP1. An electrically conductive layer 3 is provided on the upper surface of each of the gate pad electrode GP1 and the pad electrode AP1 so as to be electrically connected to the gate pad electrode GP1 and the pad electrode AP1. The die pad 2a, the semiconductor chip CH1, the semiconductor chip CH3, and the electrically conductive layers 3 are sealed by a resin layer 5 in such a way that the upper surfaces of the electrically conductive layers 3 and a lower surface of the die pad 2a are exposed. A passive element member 7 having one or more passive elements is provided on the upper surfaces of the two electrically conductive layers 3.
Inventors:
TAKAO KATSUHIRO (JP)
KUROHA ATSUSHI (JP)
AIZAWA YOSHIAKI (JP)
KUROHA ATSUSHI (JP)
AIZAWA YOSHIAKI (JP)
Application Number:
PCT/JP2022/005700
Publication Date:
December 01, 2022
Filing Date:
February 14, 2022
Export Citation:
Assignee:
AOI ELECTRONICS CO LTD (JP)
International Classes:
H01L23/48; H01L21/56; H01L21/60; H01L23/52; H01L25/07; H01L25/18
Foreign References:
| JP2009124052A | 2009-06-04 | |||
| JP2010147501A | 2010-07-01 | |||
| JP2020167748A | 2020-10-08 | |||
| JP2006216940A | 2006-08-17 |
Attorney, Agent or Firm:
TSUTSUI & ASSOCIATES (JP)
Download PDF: