Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/015541
Kind Code:
A1
Abstract:
A semiconductor device includes a first to a third nitride-based semiconductor layers, a source electrode, a drain electrode and a gate electrode. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than a bandgap of the first nitride-based semiconductor layer, so as to form a heterojunction therebetween with a two-dimensional hole gas (2DHG) region. A third nitride-based semiconductor layer is embedded in the second nitride-based semiconductor layer and spaced apart from the first nitride-based semiconductor layer. The third nitride-based semiconductor layer is doped to have a first conductivity type different than that of the second nitride-based semiconductor layer.
Inventors:
CHEN FU (CN)
HAO RONGHUI (CN)
WONG KING YUEN (CN)
HAO RONGHUI (CN)
WONG KING YUEN (CN)
Application Number:
PCT/CN2021/112399
Publication Date:
February 16, 2023
Filing Date:
August 13, 2021
Export Citation:
Assignee:
INNOSCIENCE SUZHOU TECH CO LTD (CN)
International Classes:
H01L29/778; H01L21/335
Foreign References:
| CN113013242A | 2021-06-22 | |||
| CN103715249A | 2014-04-09 | |||
| US20100006823A1 | 2010-01-14 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
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