Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/082071
Kind Code:
A1
Abstract:
A semiconductor device includes a first and a second nitride-based semiconductor layers, a first and a second electrodes, a first gate electrode, a first and a second field plates. The first field plate is disposed over the second nitride-based semiconductor layer and extends from a region between the first electrode and the first gate electrode to a region directly over the first gate electrode. The second field plate is disposed over the second nitride-based semiconductor layer and extends from a region between the first electrode and the first field plate to a region directly over the first field plate. The second field plate is horizontally spaced away from the first gate electrode.
Inventors:
ZHAO QIYUE (CN)
SHI YU (CN)
SHI YU (CN)
Application Number:
PCT/CN2021/129677
Publication Date:
May 19, 2023
Filing Date:
November 10, 2021
Export Citation:
Assignee:
INNOSCIENCE SUZHOU TECH CO LTD (CN)
International Classes:
H01L29/778; H01L21/335
Foreign References:
| CN112789731A | 2021-05-11 | |||
| CN111682065A | 2020-09-18 | |||
| CN113016074A | 2021-06-22 | |||
| CN112786685A | 2021-05-11 | |||
| US20110057257A1 | 2011-03-10 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
Download PDF:
Previous Patent: DNA TERMINAL REPAIR, LINKER REAGENT, KIT AND DNA LIBRARY CONSTRUCTION METHOD
Next Patent: DEFORMABLE WHEEL FOR VEHICLE, AND VEHICLE
Next Patent: DEFORMABLE WHEEL FOR VEHICLE, AND VEHICLE