Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/164821
Kind Code:
A1
Abstract:
The semiconductor device includes a substrate, a first and a second nitride-based semiconductor multiple layered structures, a first and a second conductive layers. The substrate has a device region and a peripheral region that encloses the device region. The first nitride-based semiconductor multiple layered structure covers the device region and has an edge in the peripheral region. The second nitride-based semiconductor multiple layered structure is within the peripheral region. The first nitride-based semiconductor multiple layered structure is separated from the second nitride-based semiconductor multiple layered structure. The first conductive layer extends from the device region to the peripheral region. The first conductive layer includes a first portion filling into a region between the first and second nitride-based semiconductor multiple layered structures. The second conductive layer is disposed between the second nitride-based semiconductor multiple layered structure and the first conductive layer and electrically coupled to the first conductive layer.
Inventors:
YAN HUI (CN)
LI SICHAO (CN)
LI SICHAO (CN)
Application Number:
PCT/CN2022/078724
Publication Date:
September 07, 2023
Filing Date:
March 02, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778; H01L29/06
Foreign References:
| CN113964103A | 2022-01-21 | |||
| US20170256638A1 | 2017-09-07 | |||
| CN108962828A | 2018-12-07 | |||
| US20210167165A1 | 2021-06-03 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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