Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/040463
Kind Code:
A1
Abstract:
A semiconductor device includes a first and a second nitride-based semiconductor layers, a first passivation layer, a gate electrode, and a first field plate. The first passivation layer has a first portion with at least one thickness modulating structure and a second portion having a planar structure. The first passivation layer makes contact with a top surface of the second nitride-based semiconductor layer to provide a variable stress thereto, such that an electron density of a first zone of the 2DEG region beneath the first portion is different from that of a second zone of the 2DEG region beneath the second portion. The first field plate is disposed over the first passivation layer and extends horizontally above the gate electrode. An orthogonal projection of the first field plate on the second nitride-based semiconductor layer is located out of the thickness modulating structure on the second nitride-based semiconductor layer.
Inventors:
HU KAI (CN)
WONG KING YUEN (CN)
HE HUIXIN (CN)
ZHANG ZHONGYU (CN)
WONG KING YUEN (CN)
HE HUIXIN (CN)
ZHANG ZHONGYU (CN)
Application Number:
PCT/CN2022/114493
Publication Date:
February 29, 2024
Filing Date:
August 24, 2022
Export Citation:
Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/20; H01L21/78; H01L29/778; H01L29/84
Foreign References:
| CN104241350A | 2014-12-24 | |||
| US20120153301A1 | 2012-06-21 | |||
| US20100327322A1 | 2010-12-30 | |||
| US20210043724A1 | 2021-02-11 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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