Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/040513
Kind Code:
A1
Abstract:
A semiconductor device includes a substrate, a plurality of epitaxy structures, a protection layer, and a dielectric layer. The substrate includes a plurality of first regions and a second region having at least one groove surrounding each of the first regions. Each of the first regions comprises a device region and an edge region surrounding the device region. The epitaxy structures are disposed over the device regions, respectively. The protection layer is disposed over and makes contact with top surfaces of the edge regions and the second region. Each of the epitaxy structures is confined by the first dielectric layer. The dielectric layer is stacked on the protection layer to form an interface therebetween. The interface is located directly on the edge region and the groove.
Inventors:
HAO RONGHUI (CN)
ZHANG LEI (CN)
WONG KING YUEN (CN)
ZHANG LEI (CN)
WONG KING YUEN (CN)
Application Number:
PCT/CN2022/114804
Publication Date:
February 29, 2024
Filing Date:
August 25, 2022
Export Citation:
Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L21/78; H01L29/778; H01L29/78
Foreign References:
| CN101295758A | 2008-10-29 | |||
| CN112635399A | 2021-04-09 | |||
| CN112740419A | 2021-04-30 | |||
| CN101378017A | 2009-03-04 | |||
| CN102067339A | 2011-05-18 | |||
| CN114665375A | 2022-06-24 | |||
| CN114730803A | 2022-07-08 | |||
| US20160079120A1 | 2016-03-17 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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