Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/010564
Kind Code:
A1
Abstract:
A semiconductor device (100A) includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a doped nitride-based semiconductor layer (110), a gate electrode (112), a first oxynitride dielectric layer, a first passivation layer, a second oxynitride dielectric layer, a second passivation layer, and a S/D electrode (130, 132). The first oxynitride dielectric layer is disposed over the second nitride-based semiconductor layer and conformally covers the doped nitride-based semiconductor layer (110) and the gate electrode (112). The first passivation layer is disposed on the first oxynitride dielectric layer and in contact with the first oxynitride dielectric layer. The second oxynitride dielectric layer is disposed on the first passivation layer and in contact with the first passivation layer. The second passivation layer is disposed on the second oxynitride dielectric layer and in contact with the second oxynitride dielectric layer. The S/D electrode (130, 132) penetrates to make contact with the second nitride-based semiconductor layer.
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Inventors:
LIU YANG (CN)
DU WEIXING (CN)
WANG PAN (CN)
YOU JHENG-SHENG (CN)
DU WEIXING (CN)
WANG PAN (CN)
YOU JHENG-SHENG (CN)
Application Number:
PCT/CN2021/111307
Publication Date:
February 09, 2023
Filing Date:
August 06, 2021
Export Citation:
Assignee:
INNOSCIENCE SUZHOU TECH CO LTD (CN)
International Classes:
H01L29/06; H01L21/335; H01L29/778
Foreign References:
| US20170294532A1 | 2017-10-12 | |||
| US20210151571A1 | 2021-05-20 | |||
| US20140264960A1 | 2014-09-18 | |||
| JP2018067633A | 2018-04-26 | |||
| CN109727863A | 2019-05-07 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
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