Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/112057
Kind Code:
A1
Abstract:
A forward termination structure (20) that surrounds an active region (10) is provided between the active region (10) and a p+ isolation region (41). A reverse termination structure (30) that surrounds the forward termination structure (20) is provided between the forward termination structure (20) and the p+ isolation region (41). The forward termination structure (20) is composed of multiple first FLRs (21) and a first FP (22) that is connected to the first FLRs (21) in an electrically conductive manner. The reverse termination structure (30) is composed of multiple second FLRs (31) and a second FP (32) that is connected to the second FLRs (31) in an electrically conductive manner. In the reverse termination structure (30), a second n-type region (35) that is in contact with the p+ isolation region (41) and includes at least one of the second FLRs (31) is provided on a surface layer of the front surface of an n- semiconductor substrate. The dose amount in the second n-type region (35) is, for example, 0.1 × 1012 to 1.6 × 1012 /cm2.
Inventors:
LU HONGFEI (JP)
Application Number:
PCT/JP2013/050699
Publication Date:
July 24, 2014
Filing Date:
January 16, 2013
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/06; H01L21/336; H01L29/739; H01L29/78
Foreign References:
| JP2005252212A | 2005-09-15 | |||
| JP2011249580A | 2011-12-08 |
Attorney, Agent or Firm:
SAKAI, AKINORI (JP)
Akinori Sakai (JP)
Akinori Sakai (JP)
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