Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/129430
Kind Code:
A1
Abstract:
The present invention is a semiconductor device including an IGBT and an FWD formed in a silicon carbide semiconductor region. The IGBT is provided with an emitter electrode, a base region, an emitter region, a collector region, a collector electrode, a gate insulating film, and a gate electrode. The emitter electrode is formed on one principal surface side of the silicon carbide semiconductor region and the collector region is formed on one principal surface side of the silicon carbide semiconductor region. The gate insulating film is in contact with the silicon carbide semiconductor region, the emitter region, and the base region and the gate electrode is opposite to the gate insulating film. The FWD is provided with a base contact region and a cathode region. The base contact region is adjacent to the emitter region and is electrically connected to the emitter electrode. The cathode region is arranged in an upper layer portion on the other principal surface side of the silicon carbide semiconductor region, is provided adjacent to the collector region, and is electrically connected to the collector electrode. The IGBT is further provided with a carrier trap-reducing region. The carrier trap-reducing region is arranged at a main current-conducting region in an upper silicon carbide semiconductor region in the collector region and has a carrier trap reduced more than in the upper silicon carbide semiconductor region in the collector region.
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Inventors:
HAMADA KENJI (JP)
MIURA NARUHISA (JP)
MIURA NARUHISA (JP)
Application Number:
PCT/JP2015/053405
Publication Date:
September 03, 2015
Filing Date:
February 06, 2015
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/336; H01L29/12; H01L29/739; H01L29/78
Foreign References:
| JP2008053667A | 2008-03-06 | |||
| JP2014017325A | 2014-01-30 | |||
| JP2008192737A | 2008-08-21 | |||
| JP2005317751A | 2005-11-10 | |||
| JP2013125763A | 2013-06-24 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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